Practice Quiz in Field Effect Transistor Devices Part 5

Online Practice Quiz in Field Effect Transistor Devices part 5 from the book Electronic Devices and Circuit Theory 10th Edition by Robert L. Boylestad.

Practice Quiz in Field Effect Transistor Devices
This is the Online Practice Quiz in Field Effect Transistor Devices Part 5 from the book, Electronic Devices and Circuit Theory 10th Edition by Robert L. Boylestad. If you are looking for a reviewer in Electronics Engineering this will definitely help. I can assure you that this will be a great help in reviewing the book in preparation for your Board Exam. Make sure to familiarize each and every questions to increase the chance of passing the ECE Board Exam.

Continue Part V of the Online Practice Quiz

Quiz in Field Effect Transistor Devices

Question 41. VMOS FETs have a _____ temperature coefficient that will combat the possibility of thermal runaway.

A. positive

B. negative

C. zero

D. None of these


Question 42. The level of _____ that results in the significant increase in drain current in enhancement-type MOSFETs is called threshold voltage VT’.

A. VDD

B. VDS

C. VGS

D. VDG


Question 43. The silicon dioxide (SiO2/sub>) layer used in a MOSFET is _____.

A. an insulator

B. a conductor

C. a semiconductor

D. None of these


Question 44. The region to the right of the pinch-off locus is commonly referred to as the _____ region.

A. constant-current

B. saturation

C. linear amplification

D. All of these


Question 45. The primary difference between the construction of a MOSFET and an FET is the _____.

A. construction of the gate connection

B. low input impedance

C. threshold voltage

D. None of these


Question 46. A(n) _____ can be used to check the condition of an FET.

A. digital display meter (DDM)

B. ohmmeter (VOM)

C. curve tracer

D. All of these


Question 47. In an n-channel enhancement-type MOSFET with a fixed value of VT’, the _____ the level of VGS’, the _____ the saturation level for VDS’.

A. higher, more

B. higher, less

C. lower, lower

D. None of these


Question 48. The FET resistance in the ohmic region is _____ at VP and _____ at the origin.

A. smallest, largest

B. largest, smallest

C. larger, smaller

D. smaller, larger


Question 49. The FET is a _____ device depending solely on either electron (n-channel) or hole (p-channel) conduction.

A. unipolar

B. bipolar

C. tripolar

D. None of these


Question 50. The primary difference between the construction of depletion-type and enhancement-type MOSFETs is _____.

A. the size of the transistor

B. the absence of the channel

C. the reverse bias junction

D. All of these

More Practice Quiz in Field Effect Transistor Devices

Practice Quiz Part 1

Practice Quiz Part 2

Practice Quiz Part 3

Practice Quiz Part 4

Practice Quiz Part 5

Practice Quiz Part 6

See: Complete List of Practice Quizzes

Note: After taking this particular quiz, you can proceed to check all the topics.


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