# Practice Quiz in Field Effect Transistor Devices Part 5

Online Practice Quiz in Field Effect Transistor Devices part 5 from the book Electronic Devices and Circuit Theory 10th Edition by Robert L. Boylestad.

This is the Online Practice Quiz in Field Effect Transistor Devices Part 5 from the book, Electronic Devices and Circuit Theory 10th Edition by Robert L. Boylestad. If you are looking for a reviewer in Electronics Engineering this will definitely help. I can assure you that this will be a great help in reviewing the book in preparation for your Board Exam. Make sure to familiarize each and every questions to increase the chance of passing the ECE Board Exam.

### Continue Part V of the Online Practice Quiz

#### Quiz in Field Effect Transistor Devices

Question 41. VMOS FETs have a _____ temperature coefficient that will combat the possibility of thermal runaway.

A. positive

B. negative

C. zero

D. None of these

Question 42. The level of _____ that results in the significant increase in drain current in enhancement-type MOSFETs is called threshold voltage VT’.

A. VDD

B. VDS

C. VGS

D. VDG

Question 43. The silicon dioxide (SiO2/sub>) layer used in a MOSFET is _____.

A. an insulator

B. a conductor

C. a semiconductor

D. None of these

Question 44. The region to the right of the pinch-off locus is commonly referred to as the _____ region.

A. constant-current

B. saturation

C. linear amplification

D. All of these

Question 45. The primary difference between the construction of a MOSFET and an FET is the _____.

A. construction of the gate connection

B. low input impedance

C. threshold voltage

D. None of these

Question 46. A(n) _____ can be used to check the condition of an FET.

A. digital display meter (DDM)

B. ohmmeter (VOM)

C. curve tracer

D. All of these

Question 47. In an n-channel enhancement-type MOSFET with a fixed value of VT’, the _____ the level of VGS’, the _____ the saturation level for VDS’.

A. higher, more

B. higher, less

C. lower, lower

D. None of these

Question 48. The FET resistance in the ohmic region is _____ at VP and _____ at the origin.

A. smallest, largest

B. largest, smallest

C. larger, smaller

D. smaller, larger

Question 49. The FET is a _____ device depending solely on either electron (n-channel) or hole (p-channel) conduction.

A. unipolar

B. bipolar

C. tripolar

D. None of these

Question 50. The primary difference between the construction of depletion-type and enhancement-type MOSFETs is _____.

A. the size of the transistor

B. the absence of the channel

C. the reverse bias junction

D. All of these

### More Practice Quiz in Field Effect Transistor Devices

Practice Quiz Part 1

Practice Quiz Part 2

Practice Quiz Part 3

Practice Quiz Part 4

Practice Quiz Part 5

Practice Quiz Part 6

### See: Complete List of Practice Quizzes

Note: After taking this particular quiz, you can proceed to check all the topics.

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