# Practice Quiz in Field Effect Transistor Devices Part 4

Online Practice Quiz in Field Effect Transistor Devices part 4 from the book Electronic Devices and Circuit Theory 10th Edition by Robert L. Boylestad.

This is the Online Practice Quiz in Field Effect Transistor Devices Part 4 from the book, Electronic Devices and Circuit Theory 10th Edition by Robert L. Boylestad. If you are looking for a reviewer in Electronics Engineering this will definitely help. I can assure you that this will be a great help in reviewing the book in preparation for your Board Exam. Make sure to familiarize each and every questions to increase the chance of passing the ECE Board Exam.

### Continue Part IV of the Online Practice Quiz

#### Quiz in Field Effect Transistor Devices

Question 31. What is the purpose of adding two Zener diodes to the MOSFET in this figure?

A. To reduce the input impedance

B. To protect the MOSFET for both polarities

C. To increase the input impedance

D. None of these

Question 32. The drain current will always be one-fourth of IDSS as long as the gate-to-source voltage is _____ the pinch-off value.

A. one-fourth

B. one-half

C. three-fourths

D. None of these

Question 33. Refer to this portion of a specification sheet. Determine the values of reverse-gate-source voltage and gate current if the FET was forced to accept it.

D. None of these

Question 34. Referring to the following transfer curve, determine the level of VGS when the drain current is 20 mA.

A. 1.66 V

B. –1.66 V

C. 0.66 V

D. –0.66 V

Question 35. Which of the following transistor(s) has (have) depletion and enhancement types?

A. BJT

B. JFET

C. MOSFET

D. None of these

Question 36. In an n-channel depletion-type MOSFET the region of positive gate voltages on the drain or transfer characteristics is referred to as the _____ region with the region between cutoff and the saturation level of ID referred to as the _____ region.

A. depletion, enhancement

B. enhancement, enhancement

C. enhancement, depletion

D. None of these

Question 37. The specification sheet provides _____ to calculate the value of k for enhancement-type MOSFETs.

A. VGS(on)

B. ID(on)

C. VGS(Th)

D. All of these

Question 38. One of the most important characteristics of the FET is its _____ impedance.

A. low input

B. medium input

C. high input

D. None of these

Question 39. In the n-channel transistor, the drain and source are connected to the _____ channel while the gate is connected to the two layers of _____ material.

A. p-type, n-type

B. p-type, p-type

C. n-type, p-type

D. n-type, n-type

Question 40. The _____ transistor has become one of the most important devices used in the design and construction of integrated circuits for digital computers.

A. MOSFET

B. BJT

C. JFET

D. None of these

### More Practice Quiz in Field Effect Transistor Devices

Practice Quiz Part 1

Practice Quiz Part 2

Practice Quiz Part 3

Practice Quiz Part 4

Practice Quiz Part 5

Practice Quiz Part 6

### See: Complete List of Practice Quizzes

Note: After taking this particular quiz, you can proceed to check all the topics.

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