# The Bipolar Transistor - Gibilisco MCQs in Electronics

MCQs in The Bipolar Transistor from the book Teach Yourself Electricity and Electronics, 5th edition by Stan Gibilisco.

This is the Multiple Choice Questions (MCQs) in Chapter 22: Bipolar Transistor from the book Teach Yourself Electricity and Electronics, 5th edition by Stan Gibilisco. If you are looking for a reviewer in Electronics Engineering this will definitely help you before taking the Board Exam.

### Begin the Test

1. In a PNP circuit, the collector:

• A. Has an arrow pointing inward.
• B. Is positive with respect to the emitter.
• C. Is biased at a small fraction of the base bias.
• D. Is negative with respect to the emitter.

2. In many cases, a PNP transistor can be replaced with an NPN device and the circuit will do the same thing, provided that:

• A. The supply polarity is reversed.
• B. The collector and emitter leads are interchanged.
• C. The arrow is pointing inward.
• D. No! A PNP device cannot be replaced with an NPN.

3. A bipolar transistor has:

• A. Three P-N junctions.
• B. Three semiconductor layers.
• C. Two N-type layers around a P-type layer.
• D. A low avalanche voltage.

4. In the dual-diode model of an NPN transistor, the emitter corresponds to:

• A. The point where the cathodes are connected together.
• B. The point where the cathode of one diode is connected to the anode of the other.
• C. The point where the anodes are connected together.
• D. Either of the diode cathodes.

5. The current through a transistor depends on:

• A. EC.
• B. EB relative to EC.
• C. IB.
• D. More than one of the above.

6. With no signal input, a bipolar transistor would have the least IC when:

• A. The emitter is grounded.
• B. The E-B junction is forward biased.
• C. The E-B junction is reverse biased.
• D. The E-B current is high.

7. When a transistor is conducting as much as it possibly can, it is said to be:

• A. In cutoff.
• B. In saturation.
• C. Forward biased.
• D. In avalanche.

NOTE: For questions 8 - 11 see Fig.22-12.

8. Refer to Fig. 22-12. The best point at which to operate a transistor as a small-signal amplifier is:

• A. A.
• B. B.
• C. C.
• D. D.

9. In Fig. 22-12, the forward-breakover point for the E-B junction is nearest to:

• A. No point on this graph.
• B. B.
• C. C.
• D. D.

10. In Fig. 22-12, saturation is nearest to point:

• A. A.
• B. B.
• C. C.
• D. D.

11. In Fig. 22-12, the greatest gain occurs at point:

• A. A.
• B. B.
• C. C.
• D. D.

12. In a common-emitter circuit, the gain bandwidth product is:

• A. The frequency at which the gain is 1.
• B. The frequency at which the gain is 0.707 times its value at 1 MHz.
• C. The frequency at which the gain is greatest.
• D. The difference between the frequency at which the gain is greatest, and the frequency at which the gain is 1.

13. The configuration most often used for matching a high input impedance to a low output impedance puts signal ground at:

• A. The emitter.
• B. The base.
• C. The collector.
• D. Any point; it doesn’t matter.

14. The output is in phase with the input in a:

• A. Common-emitter circuit.
• B. Common-base circuit.
• C. Common-collector circuit.
• D. More than one of the above.

15. The greatest possible amplification is obtained in:

• A. A common-emitter circuit.
• B. A common-base circuit.
• C. A common-collector circuit.
• D. More than one of the above.

16. The input is applied to the collector in:

• A. A common-emitter circuit.
• B. A common-base circuit.
• C. A common-collector circuit.
• D. None of the above.

17. The configuration noted for its stability in radio-frequency power amplifiers is the:

• A. Common-emitter circuit.
• B. Common-base circuit.
• C. Common-collector circuit.
• D. Emitter-follower circuit.

18. In a common-base circuit, the output is taken from the:

• A. Emitter.
• B. Base.
• C. Collector.
• D. More than one of the above.

19. The input signal to a transistor amplifier results in saturation during part of the cycle. This produces:

• A. The greatest possible amplification.
• B. Reduced efficiency.
• C. Avalanche effect.
• D. Nonlinear output impedance.

20. The gain of a transistor in a common-emitter circuit is 100 at a frequency of 1000 Hz. The gain is 70.7 at 335 kHz. The gain drops to 1 at 210 MHz. The alpha cutoff is:

• A. 1 kHz.
• B. 335 kHz.
• C. 210 MHz.
• D. None of the above.

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