Electronics Engineering Review Materials: Section 1 Module 26

This is the Section 1 Module 26 of the compiled Electronics Review Materials taken from different sources including but not limited to Electronics books, past Board Exams Questions, Journals and the Internet.

Electronics Review Materials: Section 1 Module 26

This is the Section 1 Module 26 of the compiled Electronics Review Materials taken from different sources including not limited to Electronics books, past Board Exams Questions, Journals and the Internet. This particular reviewer in Electronics Engineering has random Questions and Answers in random topics. Make sure to familiarize each questions to increase the chance of passing the ECE Board Exam.

Electronics Engineering Reviewers: Section 1 Module 26

1. For Reverse PN junction

- the C increase as Reverse PN junction decrease

2. What exist in 0 K

- the valence and conduction band do not overlap

3. In forward bias

- decrease in potential barrier

4. In reversed bias cause

- increase in potential barrier

5. Annealed Silver

- 108.8%conductivity

6. Annealed Copper

- 102% conductivity

7. Difference of CB to CE

- larger current amplification for CE

8. Method of substitution of V and I

- Substitution theorem

9. Superposition Theorem

- needs Linear and Bilateral

10. Charge that exist in both direction of a PN junction

- fixed donor and acceptor ion

11. ICBO

- collector to base current

12. Early Condition exist in BJT

- base narrowing

13. For CE

- VCB versus IB varies constantly to VCE

14. For Beta

- VCB versus IC varies constantly to IB

15. For CB

- VCB versus IC varies constantly to IE

16. Comparison of mesh and Branch current

- mesh is a assumed current while branch is a actual Current and mesh will not divide to branch

17. Conductor resistance

- 10^-4 to 10^-6 ohms

18. Semiconductor resistance

- 10^-4 to 10^9 ohms

19. Insulator resistance

- 10^9 to 10^25 ohms

20. Potentiometer color for “always counterclockwise”

- yellow

21. Potentiometer color for “always clockwise”

- green

22. Potentiometer color for “wiper”

- red

23. Potentiometer color for “color not used”

- blue

24. 99% of gold

- 72.6% conductivity

25. 99.2% of aluminum

- 63% conductivity

26. For max transformer coupled Class A

- 50% efficient

27. Transformer coupling will Increase the Class

- efficiency

28. What is larger R between12gauge copper wire versus 12gauge aluminum wire

- aluminum

29. Why emitter is heavily doped

- more power dissipation

30. When wire increase to 0-40D

- the diameter decrease

31. What Resistor is not suitable to 50Khz

- wire wound resistor

32. High frequency Resistor

- film type resistor

33. High level language for low level machine programming

- C language

34. LED operates in

- reverse bias

35. Peak inverse voltage SI diode

- 1000V

36. Maximum forward I for SI diode

- 600A

37. Signal handling capacity of a transistor must exist

- operating point must be near operating point

38. Intrinsic Semiconductor

- InP

39. Add to Si to be intrinsic

- Antimony

40. For 1000K water decrease by 25% is

- 1333

41. No molecular movement in temp.

- absolute zero

42. For Class A

- 30K

43. Lead Temperature

- 7.26K

44. Aluminum temperature

- 1.2K

45. Full wave current of the diode exist in

- half cycle

46. Half wave rectifier exist in

- less the half cycle

47. If the loop in Kirchhoff's Law is not completed

- the algebraic sum of voltage is from start to end

48. Difference of NPN to PNP

- they differ in majority carrier hole for PNP and electron for NPN

49. Not included in memory processor

- interrupt

50. Transistor terminal voltage

- terminal increase than common terminal

51. Common Emitter

- medium Ri, high Ro

52. Common Base

- Low Ri, high Ro

53. In transistor, emitter has

- Low resistance

54. Hold next instruction

- program counter

55. Special register that Hold current instruction

- instruction register

56. Increase in internal resistance of collector

- can cause smaller voltage gain

57. Avalanche breakdown occurs when

- reverse current meets a maximum value

58. DC load line has

- negative slope

59. The amount of minority carriers vary in

- potential barrier

60. Increase in current that generates more heat and the cycle repeats itself

- thermal runaway

61. Peak voltage of a transformer is VM. What is it maximum voltage in diode

- VM

62. The arrow in the symbol of a transistor

- hole pointing towards emitter

63. How to get the max heat of a line by connecting

- all in parallel

64. Zero depletion region

- equal number of Majority and minority carrier

65. Improper biasing

- cause distortion

66. What exists in depletion region of a PN junction?

- Fixed acceptor and Donor ions

67. Transistor PN junction

- base to emitter (Forward Bias) Base to collector (Reverse Bias)

68. Principal node

- branch current can Combines and divide

69. Small increase in reverse biased in base to collector

- large increase in Collector current

70. Current that flows in RB (reversed bias)

- minority carrier

71. Opposes barrier potential

- majority carrier

72. PNP, electrons flow

- collector to base

73. 1KWh

- 860kcal

74. Current in emitter

- designated as ICO

75. ICEO

- current in collector in

76. ICBO current

- increase with temperature

77. In PN junction, why does holes flow from P to N junction?

- Because there are more holes in the P junction

78. Positive Swing, transistor should be clipped?

-cut-off

79. Increase in collector resistance

-large change in collector current

80. Reverse bias

-produce small majority carriers

81. ICBO current

-flows in collector and base leads

82. Increase in holes and electron carriers os because of

-thermal carrier progression

83. Reverse bias current

-increase the flow of minority carriers

84. Collector current in a common emitter increase

-By decrease recombination of carrier to base

85. Zener diode

-operates in reverse bias

86. The Q is zero and can be increase by excitation

-class B

87. PN junction electron exists from low to high value. When a rapid increase in voltage to increase in the current.

-the minority carrier increase to get to the avalanche region

88. PN junction electron exists from low to high value. When a rapid increase in voltage to increase in the current.

-only if its potential barrier exceeds certain limit

89. Difference between triode and N-channel JFET

-triode needs more voltage

90. Transistor quiescent occur when

-no signal applied

91. The capacitance in a reverse biased diode

-depend on the intensity of the reverse voltage

92. The potential barrier is responsible on

-the increase of minority carriers

93. Zener diode works as voltage regulator

-reverse bias

94. Small amount of majority carriers in PN junction cause from

-the magnitude of potential barrier

Section 1 Modules: Reviewers in Electronic Engineering


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