Electronics Engineering Review Materials: Section 1 Module 23

This is the Section 1 Module 23 of the compiled Electronics Review Materials taken from different sources including but not limited to Electronics books, past Board Exams Questions, Journals and the Internet.

Electronics Review Materials: Section 1 Module 23

This is the Section 1 Module 23 of the compiled Electronics Review Materials taken from different sources including but not limited to Electronics books, past Board Exams Questions, Journals and the Internet. This particular reviewer in Electronics Engineering has random Questions and Answers in random topics. Make sure to familiarize each questions to increase the chance of passing the ECE Board Exam.

Electronics Engineering Reviewers: Section 1 Module 23

1.When P-type and N-type material are joined together they formed a __________

- pn junction

2.What device is formed when P-type and N-type are combined.

- junction diode

3.A forward bias diode

- anode is more positive with respect to cathode

4.Barrier potential of Silicon

0.7V

5.Minimum voltage required across a diode

- threshold voltage

6.Maximum voltage that can be applied that can be handled by junction diode

- breakdown voltage

7.In first approximation,forward bias diode is ________

- shorted with 0V voltage drop

8.Factor that tells the user the reduction of power handling capability

- power derating factor

9.Zener diode works as voltage regulator

- reverse bias

10.Computers connected in a hub

- star network

11.Transistors in active region amplifies when

- EB is forward bias and CB is reverse bias

12.In transistor,output is connected to the collector and the input is connected in the emitter

- common base

13.Transistor configuration with low Zi and high Zo

- common base

14.Transistor configuration with 180 degrees phase shift

- common emitter

15.Most unstable Q

- base bias

16.Emitter follower

- common collector

17.Use in common amplifier connection

- common emitter

18.T-circuit low pass filter

- series inductor and bypass capacitor

19.D MOSFET

- normally on

20.JFET

- unipolar and voltage controlled device

21.English programming tool design

- Psuedocode

22.Center tapped half wave rectifier is example of

- series clipper

23.In full wave center tapped transformer, current in each diode is

- 1/2

24.Limits the amplitude

- clipper

25.In voltage quadrupler,how much voltage is in the 3d diode

- 2Vmax

26.Series capacitor,parallel inductor

- low pass filter

27. Very low efficiency

- RF class A devices

28.Most efficient amplifier operation

- class C

29.Class A operation

- midway of saturation and cut-off

30.A virus that replicate itself

- worm

31.

- drift current

32.Signal that is same magnitude and same polarity

- pulsating DC

33.Conducting glass

- amorphous

34.

- transconductance

35.Passive filter

-3dB

36.Thyristors

- high switching speed

37.Thyristors

- control elements for phase angle triggered controller

38.When SCR is conducting

- gate can no longer controlled the device

39.Full wave,advance,how many diode

2

40.How many phases does a SDLC project has

5 phases

41.If the temperature of a diode material increases the threshold voltage

- decrease

42.Token Ring network

- token passing

43.Behaves like current source

- active region

44.Class A operation

- midway of saturation and cut off

45.10,1 frequency

- decade

46.2,1 frequency

- octave

47.

- both 6dB/octave and 20dB/decade

48.

- both 20dB/decade and 6dB/octave

49.Maximum power a diode can handle

- maximum dissipation factor

50.Connecting software,hardware and

- centralized

51.Friendly program of C++

- JAVA

52.Lowest programming

- machine language

53.Source follower

- common drain

54.Emitter follower

- common collector

55.FET configuration that is high Zi and low Zo

- common drain

56.The removal by electronic means of an wave form is called

- clipping

57.Shifting a wave

- clamping

58.Half wave rectifier is example of

- series clipper

59.Parallel

- shunt

60. Current flow in a semiconductor that is due to the applied electric field.

- drift current

61.VCL cutoff

- 0V

62.High power efficiency

- class C

63.Amplifier use in tuned RF

- class C

64.Push pull amplifier

- class B

65.If pulsating DC is input to the source,what will be the output at the secondary

- only AC signal

66.An AC parameter which

- transconductance

67.Diode forward bias

- anode is positive with respect to cathode

68.High pass filter

- series capacitor and parallel inductor

69.Low pass filter

- series inductor and parallel capacitor

70.Which include in the first phase of conducting a project

- survey

71.As a voltage of diode increase,the resistance will

- decrease

72.In transistor,which region is lightly doped and very thin

- base region

73.In transistor,which region is heavily doped

- emitter region

74.In transistor,which region has the large capacity

- collector region

75.A P-type semiconductor has

- trivalent impurities

76.A N-type semiconductor has

- pentavalent impurities

77.Use in high power application

- triac

78.Location of acceptor atom

- near valence shell

79.Maximum reverse current the diode can function

- reverse saturation current

80.Diode use in oscillator,also known as Esaki diode

- tunnel diode

81.Department and position

- organizational chart

82.Example are employees

- user

83.Not part of Internet

- frame

84.Most important parameter

- fore ground

85.Dot image

- half tone

86.A user that fill vacancy and need of a company

- system analyst

87.Example of this are desk checking

- testing

88.What is an operating system

- system of softwares

89.Most unstable Q,in FET

- gate bias

Section 1 Modules: Reviewers in Electronic Engineering


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