Electronics Engineering Coaching Materials: Section 4 Module 3

This is the Section 4 Module 3 of the compiled Electronics Coaching Materials taken from different sources including but not limited to Electronics books, past Board Exams Questions, Journals and the Internet.

Electronics Coaching Materials: Section 4 Module 3

This is the Section 4 Module 3 of the compiled Electronics Coaching Materials taken from different sources including but not limited to Electronics books, past Board Exams Questions, Journals and other Electronics References. This particular Coaching Notes in Electronics Engineering has random Questions and Answers in random topics. Make sure to familiarize each questions to increase the chance of passing the ECE Board Exam.

Electronics Engineering Coaching: Section 4 Module 3

SOLID STATE DEVICES and CIRCUITS (BJT/FET/MOSFET)

1. In JFET, the transconductance is the ratio of ______

CHANGE IN DRAIN CURRENT OVER THE CHANGE IN THE GATE VOLTAGE

2. MOSFET vs JFET

MOSFETS CAN HANDLE A WIDE RANGE OF BIAS VOLTAGE

3. Field-effect transistor combining the depletion mode properties and enhancement mode properties

MESFET

4. Signal diode can operate satisfactorily from front-to-back ratio or back-to-front ratio.

300 to 1

5. Ratio of small change of zener voltage with the small change of zener current

ZENER DYNAMIC IMPEDANCE

6. Cutting and peeling is an easy way to remove what kind of coating?

SILICONE

7. In n-channel JFET, pinch-off occurs when the gate bias is

VERY NEGATIVE

8. If gate source voltage is zero, the current that flows in the JFET is

DRAIN SOURCE SATURATION CURRENT

9. Bipolar transistor and JFET in multivibrator are in

COMMON-EMITTER AND COMMON-SOURCE CONNECTION

10. Used in most voltage regulators as their control element

BJT

11. The input saturates the transistor. This will __

REDUCE EFFICIENCY

12. The hfe of a bipolar transistor corresponds to

BETA

13. Current gain in common collector is called______.

GAMMA

14. _____ configuration is used as a stable RF power amplifier

COMMON BASE

15. To obtain a high input impedance, ____ configuration is used

COMMON COLLECTOR

16. When looking for good voltage gain and high input resistance _____ must be used

COMMON-SOURCE AMPLIFIER

17. Transient suppression avoid the risk of _____

DIODE FAILURE

18. Checking of transistor become cumbersome when more than one is defective

SUBSTITUTION METHOD

19. Emitter junction produced on the base layer of the mesa transistor

VACUUM EVAPORATION OR DIFFUSION

20. Solid without crystalline formation

AMORPHOUS

ELECTRONIC (AUDIO/RF) CIRCUIT/ANALYSIS/DESIGN

(Oscillators & Multivibrators, Feedbacks, Amplifiers, Attenuators, Filters)

1. Two split capacitance parallel with an inductance

COLPITTS

2. Used in Op amp differential amplifier.

RESISTOR

3. Purpose of a varactor

TUNING A GUNN-DIODE OSCILLATOR

4. In an op-amplifier, the peak value decreases when _____

POWER BANDWIDTH INCREASES

5. A voltage follower amplifier has a voltage gain of_____.

UNITY

6. Voltage amplifier is also called as

PRE-AMPLIFIER

7. Voltage gain is practically expressed in

dB UNITS

8. The voltage gain of an amplifier is expressed in

dB units

9. Current supplied in the input of an amplifier

INPUT BIAS CURRENT

10. What is the closest value of MPP of an op-amp if its two supply voltages are ± 18V?

36 V

11. Typical external frequency-compensating capacitance on op-amps

3 – 30 PF

12. Rate of output voltage of op-amp with respect to input signal

SLEW RATE

13. In amplifiers, it is made with compensating circuit,… the reason for high open loop gain…. (mahabayungtanong)

ROLL OFF

14. A 74IC op-amp unity loop gain frequency is

1 MHZ

15. An LF 157A is a/an _____ op amp

BIFET

16. In inverter amplifier, the closed loop voltage is equal to

FEEDBACK RESISTANCE DIVIDED BY INPUT RESISTANCE

17. Preventing the compensating capacitor in OP AMP

OSCILLATION

18. Bandpass, bandstop, high pass or low pass filter characterized by flat pass and high attenuation..

BUTTERWORTH FILTER

19. Frequency of the crystal depends on the _______

THICKNESS OF THE CRYSTAL

20. Rejects the band and allows the upper and lower frequency to pass. Also known as band suppression and band rejection filter.

BANDSTOP FILTER

21. A filter that allows a narrow band of frequency to pass through the circuit and rejects or attenuates the frequencies that is below or above the frequency range.

BANDPASS FILTER

22. The main disadvantage of single balance mixer is that ____________.

INPUT IS NOT COMPLETELY ISOLATED

MICROELECTRONICS

1. A technology that uses an extremely small elements…

MICROELECTRONICS

2. Electronic system which consists extremely small elements

MICROELECTRONICS

3. An assembly of microcircuit or combination of microcircuit and discrete components

MICROCIRCUIT MODULE

4. Name and letter fabricated in the body of the IC provide what information.

USE

5. Letters and number stamped on body of an IC serve to provide which of the following types of information?

USE

6. A compound of Gallium and Arsenide that is used in manufacturing microwave frequency integrated circuit, monolithic microwave frequency integrated circuit, and others…. :]

GALLIUM ARSENIDE

7. Conformal coating is said to be thin if it is less than what thickness?

0.025 inch

8. The most popular op-amp packages are the metal can,8-pin DIP and the SMT. Which of these corresponds to TO-99?

METAL CAN

9. Plug-in DIPs are susceptible to loosening because of which of the following causes?

VIBRATION

10. Layer of aligned atoms used as coating in IC production.

EPITAXIAL LAYER

11. When there is no input signal, IC is minimum

WHEN E-B IS REVERSE BIASED

12. Maximum number of IC in large scale integration

2000

13. In IC fabrication, gold and aluminum are used to

TO CONNECT PACKET LEADS

14. In IC, lead is protected from contamination during fabrication process by which of the following material

OXIDE

15. Approximate typical diameter and thickness of silicon wafer

2” ; 0.01”- 0.02”

16. A device that allows the depositing of material in selected areas of a semiconductor substrate, but not in others is known as a

WAFER MASK

17. The most complex to produce and difficult to repair printed circuit boards are those made using which of the following methods

LAYER BUILD UP METHOD

18. Advantage of IC over discrete components

HIGHER ATTAINABLE SWITCHING SPEED

19. Assembly of microelectronics or combination of microelectronics and discrete component is referred as _______

MICROCIRCUIT MODULE

20. Recommended way of removing imbedded TOs

PULL OUT GENTLY

21. Deposition of a highly radiated material in wafer

VACUUM EVAPORATION

22. A single chip with dual 555 timer built in.

556

23. Plastic insulation is commonly used in what voltage level?

MEDIUM TO LOW

24. . . ___ Total heat if electrodes.

TWO THIRDS

Complete List of Electronics Engineering Coaching Materials


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